Electronic Design

MOSFET Synchronous Rectifiers Require Attention to Gate Charge

The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
Nanowerk

The negative-capacitance transistor - Building an ideal MOSFET

(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...
EDN

C-V measurement challenges in validating power-semi designs

High-voltage capacitance-voltage (HV C-V) measurements are an increasingly important for characterizing the latest generation of wide-bandgap power semiconductor devices because the measurements are ...
Electronic Design

Improved MOSFET Model Achieves Higher Accuracy

An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
Semiconductor Engineering

Understand MOSFET Switch Behavior Via An LED Driver Simulation

Automotive incandescent bulbs have largely given way to more efficient, reliable, stylish, and even safer light emitting diodes (LEDs). LEDs turn on in a fraction of the time and are especially useful ...