Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...
- Expanding line-up of the highly efficient transistor arrays with the industry’s first DMOS FET source-output driver - TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Semiconductor & ...
Targeting use in portable-system applications that require raising a battery's voltage to a higher level, IC boost regulators often include output transistors that can drive storage inductors. However ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Semiconductor & Storage Products Company today announced the addition of new packages to its line-up of new-generation highly efficient ...
Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in ...
Microchip Technology has announced the qualification of its M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET for commercial aerospace and defense space applications. Intended for space ...
The EL7551CU step-down dc-dc regulator targets distributed power applications, including telecommunications, data communications, networking, modems, and graphics accelerators. It features synchronous ...
The Infineon Technologies company, IR HiRel, has launched its first radiation hardened MOSFETs based on the proprietary N-channel R9 technology platform. Compared to previous technologies it is said ...
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