A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Feedback field-effect transistors (FBFETs) represent a significant evolution in semiconductor device technology. Incorporating a positive feedback mechanism, these devices exhibit extremely steep ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
WASHINGTON, December 21, 2021 -- Demand for sensitive and selective electronic biosensors -- analytical devices that monitor a target of interest in real time -- is growing for a wide range of ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
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What Is a Transistor, and How Does It Work?
Transistors are tiny electronic components that act as switches and amplifiers, and they dwell at the heart of modern technology. In simple terms, a transistor can turn a flow of electricity on or off ...
(a) Concept: Cloud-enabled human-machine interface enhances HMII application scenarios. (b) Rigorous criteria requirements for interactive devices in HMII contexts. (c) Structural design of the ...
This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...
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