Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
Saelig Company, Inc. announces the availability of the CLIPPER CLP1500V15A1 - a new, high technology oscilloscope adapter that allows small voltages to be measured in the presence of very high ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150 device delivers 100 times lower ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
Morning Overview on MSN
China unveils what it claims is the tiniest, most efficient transistor ever
Researchers at Peking University have built a transistor they say is the world’s smallest and most energy-efficient, ...
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...
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