The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...
A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
Modern semiconductors facilitate faster switching speeds and lower losses to support designers. A new leadless power package drives down on-state resistance and provides close to “GaN-like” switching ...
AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...
Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...
Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...
Mission critical servers and communications equipment must continue to operate, even as circuit boards and cards are plugged-in or pulled-out for maintenance and capacity adjustment. Hot swap ...
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