GE Vernova completes $7.2M upgrade of its Italy high-voltage lab to test equipment for next-generation power grids.
Yale University’s Wright Lab is playing a vital role as one of only two U.S. assembly sites for the experiment's Charge Readout Planes (CRPs).
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
Mitsubishi announced that it has begun shipping samples of two new S1-Series high-voltage IGBT modules rated at 1.7 kV. These two components are useful for large industrial equipment, such as railcars ...
Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...
Scale-iFlex XLT plug-and-play dual-channel gate drivers from Power Integrations operate IGBT modules with blocking voltages of up to 2.3 kV. These ready-to-use drivers work with LV100 (Mitsubishi), ...